Paper Title:
Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
299-302
DOI
10.4028/www.scientific.net/MSF.389-393.299
Citation
M. Okamoto, Y. Tanaka, R. Kosugi, D. Takeuchi, S. Nakashima, S. I. Nishizawa, K. Fukuda, H. Okushi, K. Arai, "Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition", Materials Science Forum, Vols. 389-393, pp. 299-302, 2002
Online since
April 2002
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Price
$35.00
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