Silicon Carbide Technology in New Era |
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| Journal | Materials Science Forum (Volumes 389 - 393) |
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| Volume | Silicon Carbide and Related Materials 2001 |
| Edited by | S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages | 3-8 |
| DOI | 10.4028/www.scientific.net/MSF.389-393.3 |
| Authors | Hiroyuki Matsunami |
| Keywords | 4H-SiC MOSFETs, Bulk Growth, Channel Mobility, Device Processes, Epitaxial Growth, SiC Technology |
| Full Paper | 
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