Silicon Carbide Technology in New Era |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
3-8 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.3 |
| Citation |
Hiroyuki Matsunami, 2002, Materials Science Forum, 389-393, 3 |
| Authors |
Hiroyuki Matsunami |
| Keywords |
4H-SiC MOSFET, Bulk Growth, Channel Mobility, Device Processes, Epitaxial Growth, SiC Technology |
| Full Paper |
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