Paper Title:
In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
303-306
DOI
10.4028/www.scientific.net/MSF.389-393.303
Citation
R. J. Wang, I. Bhat, T. P. Chow, "In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source", Materials Science Forum, Vols. 389-393, pp. 303-306, 2002
Online since
April 2002
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Price
$32.00
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