Paper Title:
SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
307-310
DOI
10.4028/www.scientific.net/MSF.389-393.307
Citation
C. Jacquier, G. Ferro, F. Cauwet, Y. Monteil, "SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC", Materials Science Forum, Vols. 389-393, pp. 307-310, 2002
Online since
April 2002
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Price
$32.00
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