Paper Title:
Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
311-314
DOI
10.4028/www.scientific.net/MSF.389-393.311
Citation
P. G. Neudeck, J. A. Powell, A. J. Trunek, X. Huang, M. Dudley, "Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy", Materials Science Forum, Vols. 389-393, pp. 311-314, 2002
Online since
April 2002
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Price
$32.00
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