Paper Title:

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 323-326
DOI 10.4028/www.scientific.net/MSF.389-393.323
Citation Tetsuo Takahashi et al., 2002, Materials Science Forum, 389-393, 323
Authors Tetsuo Takahashi, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata, Hajime Okumura, Sadafumi Yoshida, Kazuo Arai
Keywords 3C-SiC, Atomic Force Microscope (AFM), Hetero-Epitaxy, Low-Pressure CVD, Photoluminescence (PL), X-Ray Diffraction (XRD)
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