Paper Title:
Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
| Periodical |
Materials Science Forum (Volumes 389 - 393)
|
| Main Theme |
Silicon Carbide and Related Materials 2001
|
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
323-326 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.323 |
| Citation |
Tetsuo Takahashi et al., 2002, Materials Science Forum, 389-393, 323 |
| Authors |
Tetsuo Takahashi, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata, Hajime Okumura, Sadafumi Yoshida, Kazuo Arai |
| Keywords |
3C-SiC, Atomic Force Microscope (AFM), Hetero-Epitaxy, Low-Pressure CVD, Photoluminescence (PL), X-Ray Diffraction (XRD) |
| Price |
US$ 28,- |