Paper Title:
Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
327-330
DOI
10.4028/www.scientific.net/MSF.389-393.327
Citation
A. Bakin, I. Behrens, A.A. Ivanov, E. Peiner, D. Piester, H.-H. Wehmann, A. Schlachetzki, "Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers", Materials Science Forum, Vols. 389-393, pp. 327-330, 2002
Online since
April 2002
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Price
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