Paper Title:
In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
339-342
DOI
10.4028/www.scientific.net/MSF.389-393.339
Citation
G. S. Sun, M.C. Luo, L. Wang, S.R. Zhu, J. M. Li, Y. P. Zeng, L.Y. Lin, "In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD", Materials Science Forum, Vols. 389-393, pp. 339-342, 2002
Online since
April 2002
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Price
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