Paper Title:

Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 343-346
DOI 10.4028/www.scientific.net/MSF.389-393.343
Citation Thierry Chassagne et al., 2002, Materials Science Forum, 389-393, 343
Authors Thierry Chassagne, Gabriel Ferro, Huiyao Wang, Y. Stoimenos, Hervé Peyre, Sylvie Contreras, Jean Camassel, Yves Monteil, B. Ghyselen
Keywords Chemical Vapor Deposition (CVD), Hetero-Epitaxy, SiCOI, SOI
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