Paper Title:

Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 35-38
DOI 10.4028/www.scientific.net/MSF.389-393.35
Citation Shao Ping Wang et al., 2002, Materials Science Forum, 389-393, 35
Authors Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman
Keywords Crystal Growth, Micropipe, PVT, Silicon Carbide (SiC), Sublimation, Wafer Diameter
Price US$ 28,-
Article Preview
View full size