Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
35-38 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.35 |
| Authors |
Shao Ping Wang,
Edward M. Sanchez,
A. Kopec,
S. Poplawski,
R. Ware,
S.N. Holmes,
Cengiz M. Balkas,
A.G. Timmerman
|
| Keywords |
Crystal Growth, Micropipe, PVT, Silicon Carbide (SiC), Sublimation, Wafer Diameter |
| Full Paper |
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