Paper Title:
Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
351-354
DOI
10.4028/www.scientific.net/MSF.389-393.351
Citation
H. Nakazawa, M. Suemitsu, "Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer", Materials Science Forum, Vols. 389-393, pp. 351-354, 2002
Online since
April 2002
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Price
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