Paper Title:

Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 359-362
DOI 10.4028/www.scientific.net/MSF.389-393.359
Citation Olga H. Krafcsik et al., 2002, Materials Science Forum, 389-393, 359
Authors Olga H. Krafcsik, György Vida, V. Katalin Josepovits, Peter Deák, György Z. Radnóczi, Béla Pécz, István Bársony
Keywords CO-Annealing, Epitaxial Growth, Void-Free
Price US$ 28,-
Article Preview
View full size