Paper Title:
Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
359-362
DOI
10.4028/www.scientific.net/MSF.389-393.359
Citation
O. H. Krafcsik, G. Vida, V. K. Josepovits, P. Deák, G. Z. Radnóczi, B. Pécz, I. Bársony, "Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon", Materials Science Forum, Vols. 389-393, pp. 359-362, 2002
Online since
April 2002
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Price
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