Paper Title:
Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
| Periodical |
Materials Science Forum (Volumes 389 - 393)
|
| Main Theme |
Silicon Carbide and Related Materials 2001
|
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
359-362 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.359 |
| Citation |
Olga H. Krafcsik et al., 2002, Materials Science Forum, 389-393, 359 |
| Authors |
Olga H. Krafcsik, György Vida, V. Katalin Josepovits, Peter Deák, György Z. Radnóczi, Béla Pécz, István Bársony |
| Keywords |
CO-Annealing, Epitaxial Growth, Void-Free |
| Price |
US$ 28,- |