Paper Title:
Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
367-370
DOI
10.4028/www.scientific.net/MSF.389-393.367
Citation
K. Yasui, M. Hashiba, Y. Narita, T. Akahane, "Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD", Materials Science Forum, Vols. 389-393, pp. 367-370, 2002
Online since
April 2002
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Price
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