Paper Title:
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
419-422
DOI
10.4028/www.scientific.net/MSF.389-393.419
Citation
E. Pernot, E. Neyret, C. Moulin, P. Pernot-Rejmánková, F. Templier, L. Di Cioccio, T. Billon, R. Madar, "Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography", Materials Science Forum, Vols. 389-393, pp. 419-422, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.