Paper Title:
Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
447-450
DOI
10.4028/www.scientific.net/MSF.389-393.447
Citation
T. Ohno, H. Yamaguchi, K. Kojima, J. Nishio, K. Masahara, Y. Ishida, T. Takahashi, T. Suzuki, S. Yoshida, "Replication of Defects from 4H-SiC Wafer to Epitaxial Layer", Materials Science Forum, Vols. 389-393, pp. 447-450, 2002
Online since
April 2002
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Price
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