Replication of Defects from 4H-SiC Wafer to Epitaxial Layer |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
447-450 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.447 |
| Citation |
Toshiyuki Ohno et al., 2002, Materials Science Forum, 389-393, 447 |
| Authors |
Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida |
| Keywords |
4H-SiC, Basal Plane Dislocation (BPD), Epitaxial Layer, Screw Dislocations, X-Ray Topography |
| Full Paper |
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