Paper Title:
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
455-458
DOI
10.4028/www.scientific.net/MSF.389-393.455
Citation
B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, W. M. Vetter, M. Dudley, K. Moore, T. Gehoski, "Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers", Materials Science Forum, Vols. 389-393, pp. 455-458, 2002
Online since
April 2002
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