Paper Title:
Carbon Interstitials in SiC: A Model for the DII Center
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
481-484
DOI
10.4028/www.scientific.net/MSF.389-393.481
Citation
A. Mattausch, M. Bockstedte, O. Pankratov, "Carbon Interstitials in SiC: A Model for the DII Center", Materials Science Forum, Vols. 389-393, pp. 481-484, 2002
Online since
April 2002
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Price
$35.00
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