Paper Title:
Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
489-492
DOI
10.4028/www.scientific.net/MSF.389-393.489
Citation
A. Kawasuso, M. Weidner, F. Redmann, T. Frank, R. Krause-Rehberg, G. Pensl, P. Sperr, W. Triftshäuser, H. Itoh, "Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy", Materials Science Forum, Vols. 389-393, pp. 489-492, 2002
Online since
April 2002
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