Paper Title:
Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
493-496
DOI
10.4028/www.scientific.net/MSF.389-393.493
Citation
M. F. Barthe, P. Desgardin, L. Henry, C. Corbel, D.T. Britton, G. Kögel, P. Sperr, W. Triftshäuser, P. Vicente, L. diCioccio, "Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy", Materials Science Forum, Vols. 389-393, pp. 493-496, 2002
Online since
April 2002
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