Paper Title:
EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
497-500
DOI
10.4028/www.scientific.net/MSF.389-393.497
Citation
N. Mizuochi, J. Isoya, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, "EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC", Materials Science Forum, Vols. 389-393, pp. 497-500, 2002
Online since
April 2002
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Price
$35.00
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