Paper Title:
The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
501-504
DOI
10.4028/www.scientific.net/MSF.389-393.501
Citation
M. Wagner, N.Q. Thinh, N. T. Son, P.G. Baranov, E.N. Mokhov, C. Hallin, W.M. Chen, E. Janzén, "The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction", Materials Science Forum, Vols. 389-393, pp. 501-504, 2002
Online since
April 2002
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Price
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