Paper Title:
The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
51-54
DOI
10.4028/www.scientific.net/MSF.389-393.51
Citation
Y. Miyanagi, K. Nakayama, H. Shiomi, S. Nishino, "The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity", Materials Science Forum, Vols. 389-393, pp. 51-54, 2002
Online since
April 2002
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Price
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