Paper Title:
Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
513-516
DOI
10.4028/www.scientific.net/MSF.389-393.513
Citation
Y. Koshka, G. Melnychuck, "Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC", Materials Science Forum, Vols. 389-393, pp. 513-516, 2002
Online since
April 2002
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