Paper Title:
Radiation-Induced Defects in p-Type Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
521-524
DOI
10.4028/www.scientific.net/MSF.389-393.521
Citation
S. Kanazawa, M. Okada, T. Nozaki, K. Shin, S. Ishihara, I. Kimura, "Radiation-Induced Defects in p-Type Silicon Carbide", Materials Science Forum, Vols. 389-393, pp. 521-524, 2002
Online since
April 2002
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Price
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