Paper Title:
Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
541-544
DOI
10.4028/www.scientific.net/MSF.389-393.541
Citation
R. K. Malhan, J. Kozima, T. Yamamoto, A. Fukumoto, "Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC", Materials Science Forum, Vols. 389-393, pp. 541-544, 2002
Online since
April 2002
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Price
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