Paper Title:
Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
55-58
DOI
10.4028/www.scientific.net/MSF.389-393.55
Citation
M. Katsuno, N. Ohtani, T. Fujimoto, T. Aigo, H. Yashiro, "Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC", Materials Science Forum, Vols. 389-393, pp. 55-58, 2002
Online since
April 2002
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Price
$32.00
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