Paper Title:
Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
557-560
DOI
10.4028/www.scientific.net/MSF.389-393.557
Citation
S. I. Soloviev, Y. Gao, Y. I. Khlebnikov, I.I. Khlebnikov, T. S. Sudarshan, "Aluminum and Boron Diffusion into (1-100) Face SiC Substrates", Materials Science Forum, Vols. 389-393, pp. 557-560, 2002
Online since
April 2002
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Price
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