Paper Title:
Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
561-564
DOI
10.4028/www.scientific.net/MSF.389-393.561
Citation
B. Aradi, A. Gali, P. Deák, N. T. Son, E. Janzén, "Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC", Materials Science Forum, Vols. 389-393, pp. 561-564, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.