Paper Title:
Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth
| Periodical |
Materials Science Forum (Volumes 389 - 393)
|
| Main Theme |
Silicon Carbide and Related Materials 2001
|
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
565-568 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.565 |
| Citation |
Margareta K. Linnarsson et al., 2002, Materials Science Forum, 389-393, 565 |
| Authors |
Margareta K. Linnarsson, Urban Forsberg, Martin S. Janson, Erik Janzén, Bengt G. Svensson |
| Keywords |
Chemical Vapor Deposition (CVD), Deuterium, Hydrogen, SIMS |
| Price |
US$ 28,- |