Paper Title:

Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 565-568
DOI 10.4028/www.scientific.net/MSF.389-393.565
Citation Margareta K. Linnarsson et al., 2002, Materials Science Forum, 389-393, 565
Authors Margareta K. Linnarsson, Urban Forsberg, Martin S. Janson, Erik Janzén, Bengt G. Svensson
Keywords Chemical Vapor Deposition (CVD), Deuterium, Hydrogen, SIMS
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