Paper Title:
Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
565-568
DOI
10.4028/www.scientific.net/MSF.389-393.565
Citation
M. K. Linnarsson, U. Forsberg, M. S. Janson, E. Janzén, B. G. Svensson, "Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth", Materials Science Forum, Vols. 389-393, pp. 565-568, 2002
Online since
April 2002
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