Paper Title:
New and Improved Quantitative Characterization of SiC Using SIMS
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
581-584
DOI
10.4028/www.scientific.net/MSF.389-393.581
Citation
L. Wang, D. B. Sams, A. Wang, B. S. Park, "New and Improved Quantitative Characterization of SiC Using SIMS", Materials Science Forum, Vols. 389-393, pp. 581-584, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.