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Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation

Journal Materials Science Forum (Volumes 389 - 393)
Volume Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 597-600
DOI 10.4028/www.scientific.net/MSF.389-393.597
Citation Michio Tajima et al., 2002, Materials Science Forum, 389-393, 597
Authors Michio Tajima, M. Tanaka, Norihiro Hoshino
Keywords Deep Level, Epitaxial Layer, Mapping, Non-Uniformity, Photoluminescence (PL)
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