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Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation, p.597
UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC, p.601
Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature, p.605
Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC, p.609
Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy, p.613
Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum, p.617
Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy, p.621
Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy, p.625
Sensitive Detection of Defects in α and β SiC by Raman Scattering, p.629

Home > Materials Science Forum > Silicon Carbide and Related Materials 2001 > Photoconductivity of Lightly-Doped and...

Paper Title:

Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

Periodical	Materials Science Forum (Volumes 389 - 393)
Main Theme	Silicon Carbide and Related Materials 2001
Edited by	S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages	613-616
DOI	10.4028/www.scientific.net/MSF.389-393.613
Citation	Ivan G. Ivanov et al., 2002, Materials Science Forum, 389-393, 613
Authors	Ivan G. Ivanov, Jie Zhang, L. Storasta, Erik Janzén
Keywords	Electronic Band-Gap, Exciton Binding Energy, Excitonic Band-Gap, Extrinsic Photocurrent, Intrinsic Photocurrent
Price	US$ 28,-

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