Paper Title:
Sensitive Detection of Defects in α and β SiC by Raman Scattering
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
629-632
DOI
10.4028/www.scientific.net/MSF.389-393.629
Citation
S. Nakashima, Y. Nakatake, Y. Ishida, T. Takahashi, H. Okumura, "Sensitive Detection of Defects in α and β SiC by Raman Scattering", Materials Science Forum, Vols. 389-393, pp. 629-632, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.