Paper Title:
Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
651-654
DOI
10.4028/www.scientific.net/MSF.389-393.651
Citation
S. Nakamura, H. Kumagai, T. Kimoto, H. Matsunami, "Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC", Materials Science Forum, Vols. 389-393, pp. 651-654, 2002
Online since
April 2002
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Price
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