Paper Title:
Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
659-662
DOI
10.4028/www.scientific.net/MSF.389-393.659
Citation
J. Suda, S. Nakamura, M. Miura, T. Kimoto, H. Matsunami, "Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 389-393, pp. 659-662, 2002
Online since
April 2002
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