Paper Title:
Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
663-666
DOI
10.4028/www.scientific.net/MSF.389-393.663
Citation
J. Österman, S. Anand, M. K. Linnarsson, A. Hallén, "Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy", Materials Science Forum, Vols. 389-393, pp. 663-666, 2002
Online since
April 2002
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