Paper Title:
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
671-674
DOI
10.4028/www.scientific.net/MSF.389-393.671
Citation
Y. Fukuda, K. Nishikawa, M. Shimizu, H. Iwakuro, "Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide", Materials Science Forum, Vols. 389-393, pp. 671-674, 2002
Online since
April 2002
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