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Photoemission Electron Imaging of Transition Metal (Ti, Ni) Surfaces on Si and SiC, p.721
In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001), p.725
Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces, p.729
Optimization of Interface and Interphase Systems: The Case of SiC and III-V Nitrides, p.733
Towards Quantum Structures in SiC, p.737
Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations, p.743
Growth and Characterization of Three-Dimensional SiC Nanostructures on Si, p.747
Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures, p.751
Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface Micromachining, p.755

Home > Materials Science Forum > Silicon Carbide and Related Materials 2001 > Towards Quantum Structures in SiC

Paper Title:

Towards Quantum Structures in SiC

Periodical	Materials Science Forum (Volumes 389 - 393)
Main Theme	Silicon Carbide and Related Materials 2001
Edited by	S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages	737-742
DOI	10.4028/www.scientific.net/MSF.389-393.737
Citation	Friedhelm Bechstedt et al., 2002, Materials Science Forum, 389-393, 737
Authors	Friedhelm Bechstedt, Andreas Fissel, Ulrike Grossner, Ute Kaiser, Hans-Christian Weissker, Werner Wesch
Keywords	Excitation Energy, Nanocrystallite, Polytype, Quantum Confinement, Spontaneous Polarization, Type of Heterostructure
Price	US$ 28,-

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