Paper Title:
Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
743-746
DOI
10.4028/www.scientific.net/MSF.389-393.743
Citation
H.-C. Weissker, J. Furthmüller, F. Bechstedt, "Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations", Materials Science Forum, Vols. 389-393, pp. 743-746, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.