Paper Title:
Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
759-762
DOI
10.4028/www.scientific.net/MSF.389-393.759
Citation
H. T. M. Pham, C. R. de Boer, L. Pakula, P. M. Sarro, "Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide", Materials Science Forum, Vols. 389-393, pp. 759-762, 2002
Online since
April 2002
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