Paper Title:
Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
795-798
DOI
10.4028/www.scientific.net/MSF.389-393.795
Citation
J. Senzaki, S. Harada, R. Kosugi, S. Suzuki, K. Fukuda, K. Arai, "Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing", Materials Science Forum, Vols. 389-393, pp. 795-798, 2002
Online since
April 2002
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