Paper Title:
Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
799-802
DOI
10.4028/www.scientific.net/MSF.389-393.799
Citation
Y. Tanaka, H. Tanoue, K. Arai, "Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing", Materials Science Forum, Vols. 389-393, pp. 799-802, 2002
Online since
April 2002
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