Paper Title:
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
823-826
DOI
10.4028/www.scientific.net/MSF.389-393.823
Citation
T. Ohno, K. Amemiya, "Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC", Materials Science Forum, Vols. 389-393, pp. 823-826, 2002
Online since
April 2002
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Price
$32.00
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