Paper Title:
Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
839-842
DOI
10.4028/www.scientific.net/MSF.389-393.839
Citation
T. Nakamura, S. Matsumoto, T. Horibe, M. Satoh, "Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)", Materials Science Forum, Vols. 389-393, pp. 839-842, 2002
Online since
April 2002
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