Paper Title:
Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
847-850
DOI
10.4028/www.scientific.net/MSF.389-393.847
Citation
R. Ono, M. Fujimaki, J. Senzaki, S. Tanimoto, T. Shinohe, H. Okushi, K. Arai, "Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)", Materials Science Forum, Vols. 389-393, pp. 847-850, 2002
Online since
April 2002
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