Paper Title:
Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
855-858
DOI
10.4028/www.scientific.net/MSF.389-393.855
Citation
G.J. Phelps, N. G. Wright, E.G. Chester, C. M. Johnson, A. G. O'Neill, S. Ortolland, A. B. Horsfall, K. Vassilevski, R. Gwilliam, "Enhanced Dopant Diffusion Effects in 4H Silicon Carbide", Materials Science Forum, Vols. 389-393, pp. 855-858, 2002
Online since
April 2002
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Price
$32.00
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