Paper Title:
Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
863-866
DOI
10.4028/www.scientific.net/MSF.389-393.863
Citation
W. Bahng, N. K. Kim, S. C. Kim, G. H. Song, E. D. Kim, "Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer", Materials Science Forum, Vols. 389-393, pp. 863-866, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.