Paper Title:
Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
917-920
DOI
10.4028/www.scientific.net/MSF.389-393.917
Citation
R. Kakanakov, L. Kassamakova, N. Hristeva, G. Lepoeva, N.I. Kuznetsov, K. Zekentes, "Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode", Materials Science Forum, Vols. 389-393, pp. 917-920, 2002
Online since
April 2002
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