Paper Title:
Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching Process
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
949-952
DOI
10.4028/www.scientific.net/MSF.389-393.949
Citation
S. C. Kang, M. W. Shin, "Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching Process", Materials Science Forum, Vols. 389-393, pp. 949-952, 2002
Online since
April 2002
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