Influence of the Crystal Thickness on the SiC PVT Growth Rate |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
95-98 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.95 |
| Citation |
Dimitri I. Cherednichenko et al., 2002, Materials Science Forum, 389-393, 95 |
| Authors |
Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Roman Drachev, I.I. Khlebnikov, Tangali S. Sudarshan |
| Keywords |
Modeling, Self-Congruent Conditions, Velocity of SiC Growth |
| Full Paper |
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